Publications

You can also find my articles on my Google Scholar profile.

2024:

  1. Ruiqi Chen, Haozhang Yang, Ruiyi Li, Guihai Yu, Yizhou Zhang, Junchen Dong, Dedong Han, Zheng Zhou, Peng Huang*, Lifeng Liu, Xiaoyan Liu*, Jinfeng Kang, “Thin-film transistor for temporal self-adaptive reservoir computing with closed-loop architecture,” Science Advances 10, eadl1299 (2024).
  2. Yulin Feng, Yizhou Zhang, Zheng Zhou, Peng Huang*, Lifeng Liu*, Xiaoyan Liu, Jinfeng Kang, “Memristor-based storage system with convolutional autoencoder-based image compression network,” Nature Communications 15, 1132(2024).

2023:

  1. Haozhang Yang, Peng Huang*, Ruiyi Li, Nan Tang, Yizhou Zhang, Zheng Zhou, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang, Flash-based content addressable memory with L2 distance for memory-augmented neural network, Iscience, 108371, 26(12), 2023.
  2. Ruiyi Li, Haozhang Yang, Yizhou Zhang, Nan Tang, Ruiqi Chen, Zheng Zhou, Lifeng Liu, Jinfeng Kang, Peng Huang, Adjustable short-term memory of SiOx: Ag-based memristor for reservoir computing, Nanotechnology, 505207, 34(50), 2023.
  3. Lixia Han, Peng Huang, Zheng Zhou, Yiyang Chen, Xiaoyan Liu, Jinfeng Kang, A Convolution Neural Network Accelerator Design with Weight Mapping and Pipeline Optimization, 60th ACM/IEEE Design Automation Conference (DAC), 1-6, 2023.
  4. Haozhang Yang, Peng Huang*, Runze Han, Xiaoyan Liu, Jinfeng Kang, An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash, Science China Information Sciences, 66(4), 1-11, 2023.
  5. Yulin Feng, Peng Huang*, Yiyang Chen, Yizhou Zhang, Ruiyi Li, Zheng Zhou, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang, Fast and Accurate Weight Updating Strategy for Resistive Random-Access Memory (RRAM)-Based Neural Networks, IEEE Electron Device Letters, 44 (3), 416-419, 2023.

2022:

  1. Runze Han, Peng Huang*, Yachen Xiang, Hong Hu, Sheng Lin, Peiyan Dong, Wensheng Shen, Yanzhi Wang, Xiaoyan Liu, Jinfeng Kang, Floating Gate Transistor‐Based Accurate Digital In‐Memory Computing for Deep Neural Networks, Advanced Intelligent Systems, 4(12), 2200127, 2022.
  2. Lixia Han, Peng Huang*, Yijiao Wang, Zheng Zhou, Yizhou Zhang, Xiaoyan Liu, Jinfeng Kang, Efficient Discrete Temporal Coding Spike-Driven In-Memory Computing Macro for Deep Neural Network Based on Nonvolatile Memory, IEEE Transactions on Circuits and Systems I: Regular Papers, 69(11), 2022.
  3. Yizhou Zhang, Peng Huang*, Linlin Cai, Yulin Feng, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang*, Optimized Programming Scheme Enabling Symmetric Conductance Modulation in HfO2 Resistive Random-Access Memory (RRAM) for Neuromorphic Systems, IEEE Electron Device Letters, 43 (8), 1203-1206, 2022.
  4. Haozhang Yang, Peng Huang*, Zheng Zhou, Yizhou Zhang, Runze Han, Xiaoyan Liu, Jinfeng Kang*, Mixed-Precision Partial Differential Equation Solver Design Based on Nonvolatile Memory, IEEE Transactions on Electron Devices, 69 (7), pp.3708-3715, 2022.
  5. Xiangxiang Ding, Peng Huang*, Yulin Feng, and Lifeng Liu*, Understanding of the Volatile and Nonvolatile Switching in Ag-Based Memristors, IEEE Transactions on Electron Devices, 69 (3), pp.1034-1040, 2022.

2021:

  1. Yulin Feng, Peng Huang*, Yudi Zhao, Yihao Shan, Yizhou Zhang, Zheng Zhou, Lifeng Liu*, Xiaoyan Liu, Jinfeng Kang, Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing, IEEE Electron Device Letters, 42 (8), pp.1168-1171, 2021.
  2. Runze Han, Yachen Xiang, Peng Huang*, Yihao Shan, Xiaoyan Liu, Jinfeng Kang*, Flash Memory Array for Efficient Implementation of Deep Neural Networks, Advanced Intelligent Systems, 3(5), 2000161, 2021.
  3. Yizhou Zhang, Peng Huang*, Bin Gao, Jinfeng Kang, Huaqiang Wu, Oxide based Filamentary RRAM for Deep Learning, Journal of Physics D: Applied Physics, 54 (8), 083002, 2021.
  4. Lixia Han, Yachen Xiang, Peng Huang*, Guihai Yu, Runze Han, Xiaoyan Liu, Jinfeng Kang, Novel Weight Mapping Method for Reliable NVM based Neural Network, 2021 IEEE International Reliability Physics Symposium (IRPS), pp.1-6, 2021.
  5. Wensheng Shen, Peng Huang*, Mengqi Fan, Yudi Zhao, Yulin Feng, Lifeng Liu, Xiaoyan Liu, Xing Zhang, Jinfeng Kang, A Seamless, Reconfigurable, and Highly Parallel In-Memory Stochastic Computing Approach with Resistive Random Access Memory Array, IEEE Transactions on Electron Devices, 68 (1), pp.103-108, 2021.

2020:

  1. Yachen Xiang, Peng Huang*, Runze Han, Chu Li, Kunliang Wang, Xiaoyan Liu, Jinfeng Kang*, Efficient and Robust Spike-Driven Deep Convolutional Neural Networks Based on NOR Flash Computing Array, IEEE Transactions on Electron Devices, 67 (6), pp.2329-2335, 2020.
  2. Yulin Feng, Peng Huang*, Yizhou Zhang, Wensheng Shen, Weijie Xu, Yachen Xiang, Xiangxiang Ding, Yudi Zhao, Bin Gao, Huaqiang Wu, He Qian, Lifeng Liu*, Xiaoyan Liu, Jinfeng Kang, A Self‐Terminated Operation Scheme for High‐Parallel and Energy‐Efficient Forming of RRAM Array, Advanced Electronics Materials, 6(4), 1901324, 2020.
  3. Linlin Cai, Wangyong Chen, Yudi Zhao, Xiaoyan Liu, Jinfeng Kang, Xing Zhang*, Peng Huang*, A Physics-based Analytic Model of Analog Switching Resistive Random Access Memory, IEEE Electron Device Letters, 41 (2), pp.236-239, 2020.

2019:

  1. Peng Huang, Runze Han, Jinfeng Kang, AI learns how to learn with TCAMs, Nature Electronics, 2019, 2(11), pp.493-494, 2019.
  2. Yachen Xiang, Peng Huang*, Haozhang Yang, Kunliang Wang, Runze Han, Wensheng Shen, Yulin Feng, Chen Liu, Xiaoyan Liu, Jinfeng Kang*, Storage Reliability of Multi-bit Flash Oriented to Deep Neural Network, IEEE International Electron Devices Meeting (IEDM), pp.919-922, San Francisco, CA, USA, 2019-12-9至2019-12-11.
  3. Yudi Zhao, Wensheng Shen, Peng Huang*, Weijie Xu, Mengqi Fan, Xiaoyan Liu, Jinfeng Kang*, A Physics-based Model of RRAM Probabilistic Switching for Generating Stable and Accurate Stochastic Bit-streams, IEEE International Electron Devices Meeting (IEDM), pp.767-770, San Francisco, CA, USA, 2019-12-9至2019-12-11.
  4. Yudi Zhao, Peng Huang*, Zheng Zhou, Chen Liu, Shengjun Qin, Lifeng Liu, Xiaoyan Liu, H-S Philip Wong, Jinfeng Kang*, A Physics-Based Compact Model for CBRAM Retention Behaviors Based on Atom Transport Dynamics and Percolation Theory, IEEE Electron Device Letters, 40 (4), pp.647-650, 2019.
  5. Wensheng Shen, Peng Huang*, Mengqi Fan, Runze Han, Zheng Zhou, Bin Gao, Huaqiang Wu, He Qian, Lifeng Liu, Xiaoyan Liu, Xing Zhang, Jinfeng Kang*, Stateful Logic Operations in One-Transistor-One-Resistor Resistive Random Access Memory Array, IEEE Electron Device Letters, 40 (9), pp.1538-1541, 2019.
  6. Yachen Xiang, Peng Huang*, Runze Han, Zheng Zhou, Qingming Shu, Zhiqiang Su, Hong Hu, Lu Liu, Yongbo Liu, Xiaoyan Liu, Jinfeng Kang*, Hardware Implementation of Energy Efficient Deep Learning Neural Network Based on Nanoscale Flash Computing Array, Advanced Materials Technologies, 4 (5), 1800720, 2019.
  7. Peng Huang, Zefan Li, Zhen Dong, Runze Han, Zheng Zhou, Dongbin Zhu, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang*, Binary Resistive-Switching-Device-Based Electronic Synapse with Spike-Rate-Dependent Plasticity for Online Learning, ACS Applied Electronic Materials, 1 (6), pp.845-853, 2019.
  8. Linlin Cai, Wangyong Chen, Yudi Zhao, Xiaoyan Liu, Jinfeng Kang, Xing Zhang*, Peng Huang*, Insight into Effects of Oxygen Reservoir Layer and Operation Schemes on Data Retention of HfO2-Based RRAM, IEEE Transactions on Electron Devices, 66 (9), pp. 3822-3827, 2019.
  9. Peng Huang, Zheng Zhou, Yizhou Zhang, Yachen Xiang, Runze Han, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang, Hardware implementation of RRAM based binarized neural networks, APL Materials, 7 (8), 081105, 2019.
  10. Runze Han, Peng Huang*, Yachen Xiang, Chen Liu, Zhen Dong, Zhiqiang Su, Yongbo Liu, Lu Liu, Xiaoyan Liu, Jinfeng Kang*, A Novel Convolution Computing Paradigm Based on NOR Flash Array With High Computing Speed and Energy Efficiency, IEEE Transactions on Circuits and Systems I: Regular Papers, 66 (2), pp.1692-1703, 2019.
  11. Yachen Xiang, Peng Huang*, Yudi Zhao, Meiran Zhao, Bin Gao, Huaqiang Wu, He Qian, Xiaoyan Liu, Jinfeng Kang, Impacts of State Instability and Retention Failure of Filamentary Analog RRAM on the Performance of Deep Neural Network, IEEE Transactions on Electron Devices, 66(11), pp. 4517-4522, 2019.

2018:

  1. Peng Huang, Yachen Xiang, Yudi Zhao, Chen Liu, Bin Gao, Huaqiang Wu, He Qian, Xiaoyan Liu, Jinfeng Kang, Analytic Model for Statistical State Instability and Retention Behaviors of Filamentary Analog RRAM Array and Its Applications in Design of Neural Network, IEEE International Electron Devices Meeting (IEDM), pp.937-940, San Francisco, CA, USA, 2018-12-3至2018-12-5.
  2. Chen Liu, Fei Liu, Qing Luo, Peng Huang*, Xiaoxin Xu, Hangbin Lv, Yudi Zhao, Xiaoyan Liu, Jinfeng Kang*, Role of Oxygen Vacancies in Electric Field Cycling Behaviors of Ferroelectric Hafnium Oxide, IEEE International Electron Devices Meeting (IEDM), pp. 376-379, San Francisco, CA, USA, 2018-12-3至2018-12-5.
  3. Zheng Zhou, Peng Huang*, Yachen Xiang, Wensheng Shen, Yudi Zhao, Yulin Feng, Bin Gao, Huaqiang Wu, He Qian, Lifeng Liu, Xing Zhang, Xiaoyan Liu, Jinfeng Kang*, A new hardware implementation approach of BNNs based on nonlinear 2T2R synaptic cell, IEEE International Electron Devices Meeting (IEDM), pp.488-491, San Francisco, CA, USA, 2018-12-3至2018-12-5.
  4. Yun Li, Peng Huang*, Shaoyan Di, Xing Zhang, Gang Du, Xiaoyan Liu*, Comprehensive Investigation of Multitraps-Induced Degradation in HfO2-Based nMOSFETs With Interfacial Layer by Three-Dimensional KMC Method, IEEE Transactions on Nanotechnology, 17 (2), pp. 198–204, 2018.

2018之前:

  1. Peng Huang, Dongbin Zhu, Chen Liu, Zheng Zhou, Zhen Dong, Hai Jiang, Wensheng Shen, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang, RTN based Oxygen Vacancy Probing Method for Ox-RRAM Reliability Characterization and Its Application in Tail Bits, IEEE International Electron Devices Meeting (IEDM), pp.525-528, San Francisco, CA, USA, 2017-12-4至2017-12-6.
  2. Peng Huang, Dongbin Zhu, Sijie Chen, Zheng Zhou, Zhe Chen, Bin Gao, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang, Compact Model of HfOX-Based Electronic Synaptic Devices for Neuromorphic Computing, IEEE Transactions on Electron Devices 64 (2), pp. 614-621, 2017.
  3. Peng Huang, Jinfeng Kang, Yudi Zhao, Sijie Chen, Runze Han, Zheng Zhou, Zhe Chen, Wenjia Ma, Mu Li, Lifeng Liu, Xiaoyan Liu, Reconfigurable nonvolatile logic operations in resistance switching crossbar array for large-scale circuits, Advanced Materials, 28 (44), pp. 9758-9764, 2016.
  4. Peng Huang, Sijie Chen, Yudi Zhao, Bing Chen, Bin Gao, Lifeng Liu, Yong Chen, Ziying Zhang, Weihai Bu, Hanming Wu, Xiaoyan Liu, Jinfeng Kang, Self-Selection RRAM Cell with Sub-μA Switching Current and Robust Reliability Fabricated by High-K/Metal Gate CMOS Compatible Technology, IEEE Transactions on Electron Devices, 63 (11), pp. 4295-4301, 2016.
  5. Yudi Zhao, Junjie Hu, Peng Huang*, Fang Yuan, Yang Chai, Xiaoyan Liu, Jinfeng Kang*, A physics-based compact model for material-and operation-oriented switching behaviors of CBRAM, IEEE International Electron Devices Meeting (IEDM), pp.188-191, San Francisco, CA, USA, 2016-12-5至2016-12-7.
  6. Zhe Chen, Haitong Li, Hong-Yu Chen, Bing Chen, Rui Liu, Peng Huang*, Feifei Zhang, Zizhen Jiang, Hongfei Ye, Bin Gao, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang*, H.-S. Philip Wong, Shimeng Yu, Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array, Nanotechnology, 27 (21), p215204, 2016.
  7. Peng Huang, Yijiao Wang, Haitong Li, Bin Gao, Bing Chen, Feifei Zhang, Lang Zeng, Gang Du, Jinfeng Kang, Xiaoyan Liu, Analysis of the voltage–time dilemma of metal oxide-based RRAM and solution exploration of high speed and low voltage AC switching, IEEE Transactions on Nanotechnology, 13 (6), pp. 1127–1132, Nov. 2014.
  8. Peng Huang, Xiaoyan Liu, Bing Chen, Haitong Li, Yijiao Wang, Yexin Deng, Kangliang Wei, Lang Zeng, Bin Gao, Gang Du, Xing Zhang, Jinfeng Kang, A physics-based compact model of metal-oxide-based RRAM DC and AC operations, IEEE Transactions on Electron Devices, 60 (12), pp. 4090-4097, 2013.
  9. Peng Huang, Bing Chen, Yijiao Wang, Feifei Zhang, Lei Shen, Rui Liu, Lang Zeng, Gang Du, Xing Zhang, Bin Gao, Jinfeng Kang, Xiaoyan Liu, Xingpeng Wang, Baobin Weng, Yanzhe Tang, Guo-Qiang Lo, Dim-Lee Kwong, Analytic model of endurance degradation and its practical applications for operation scheme optimization in metal oxide based RRAM, IEEE International Electron Devices Meeting (IEDM), pp.597-600, Washington, D.C., USA, 2013-12-9至2013-12-11.
  10. Peng Huang, Xiaoyan Liu, Wenhao Li, Yexin Deng, Bing Chen, Yang Lu, Bin Gao, Lang Zeng, Kangliang Wei, Gang Du, Xing Zhang, Jinfeng Kang, A physical based analytic model of RRAM operation for circuit simulation, IEEE International Electron Devices Meeting (IEDM), pp.605-608, San Francisco, CA, USA, 2012-12-11至2012-12-13.

邀请报告:

  1. Peng Huang, RRAM-based computation in memory for deep neural networks, 2023, CSTIC, Shanghai, 2023-06.
  2. Huang Peng, Neuromorphic Computing Based on Binary OxRRAM Devices; 2019 IMEC-Stanford RRAM/MRAM Workshop, Leuven, 2019-10.

专著:

  1. Peng Huang, Yudi Zhao, Jinfeng Kang, Resistive-Switching Memories- Springer Handbook of Semiconductor Devices, Springer, 2022.
  2. Peng Huang, Bin Gao, Jinfeng Kang, Emerging Non-volatile Memory Technologies: RRAM Device Characterizations and Modelling, Springer, Singapore, 2021.

获得授权专利列表:

  1. 黄鹏,宋仕岳,刘力锋,刘晓彦,康晋锋,一种基于阻变存储器的随机数发生电路及方法,2023.12.1,中国,ZL202310006919.0
  2. 黄鹏, 杨昊璋, 康晋锋, 韩润泽, 项亚臣, 刘晓彦, 刘力锋,CAM器件及其操作方法,2023.2.28,中国,ZL202110293251.3
  3. 刘力锋,宋仕岳,沈文生,黄鹏,康晋锋,张兴 ,存内逻辑电路,2023.8.25,中国,ZL202110734397.7
  4. 周正,于贵海,刘晓彦,康晋锋,黄鹏,像素结构单元、像素阵列及其操作方法、图像传感器,2023.2.17,中国,ZL202210447721.1
  5. 黄鹏,项亚臣,康晋锋,刘晓彦,韩润泽,基于Flash存算阵列的脉冲型卷积神经网络,2022.8.12,中国,ZL201910741894.2
  6. 黄鹏,冯玉林,田明,刘力锋,康晋锋,阻变存储器及其制作方法,2022.3.8,中国,ZL202010145159.8
  7. 黄鹏,杨昊璋,康晋锋,韩润泽,项亚臣,刘晓彦,刘力锋,三态内容可寻址存储器及其操作方法,2022.2.15,中国,ZL202010149086.X
  8. 黄鹏,项亚臣,康晋锋,刘晓彦,编码型闪存装置、系统和编码方法,2022.5.27,中国,ZL202010471843.5
  9. 黄鹏,项亚臣,康晋锋,刘晓彦,编码型闪存转置和编码方法,2022.7.5,中国,ZL202010472550.9
  10. 康晋锋,张逸舟,田明,刘晓彦,黄鹏,用于生产安全密钥的单元结构、阻变存储器及方法,2022.4.12,中国,ZL202011468351.7
  11. 康晋锋,张逸舟,田明,刘晓彦,黄鹏,用于设置阻变存储器的电路及其操作方法,2022.11.01,中国,ZL202011468352.1
  12. 黄鹏,冯玉林,刘力锋,刘晓彦,康晋锋,三维垂直阻变存储器阵列及其操作方法,2022.5.17,中国,ZL202010369772.8
  13. 黄鹏,韩润泽,刘晓彦,康晋锋,编码型闪存型结构及数据处理方法,2022.3.26,中国,ZL202010224515.5
  14. 黄鹏,韩润泽,刘晓彦,康晋锋,编码型闪存结构及数据处理方法,2022.3.18,中国,ZL202010223681.3
  15. 黄鹏,康晋锋,李木,刘晓彦,基于忆阻器的运算存储阵列设备及其操作方法,2019.7.16,中国,ZL201610443883.2
  16. 黄鹏,康晋锋,李木,刘晓彦,阻变运算存储设备,2019.6.20,中国,ZL201610443316.7
  17. 黄鹏,康晋锋,李泽凡,刘晓彦,刘力锋,电路和电路的工作方法,2021.7.21,中国,ZL201810057013.0
  18. 康晋锋,黄鹏,刘晓彦,刘力锋,数据搜索系统及方法,2021.2.20,中国,ZL201611190709.8
  19. 康晋锋,柳晨,黄鹏,周正,刘力锋,刘晓彦,基于阻变存储阵列的卷积计算存储一体化设备及方法,2019.3.19,中国,ZL201611235411.4
  20. 柳晨,康晋锋,黄鹏,周正,刘晓彦,基于阻变存储器件阵列实现并行卷积计算的设备和方法,2019.9.6, 中国,ZL201610930552.1
  21. 康晋锋,黄鹏,韩润泽,刘晓彦,刘力锋,实现图像卷积的编码型闪存系统及工作方法,2019.10.22,中国,ZL201710024111.X
  22. 康晋锋,黄鹏,韩润泽,刘晓彦,一种基于NOR flash阵列的卷积运算方法,中国,2019.4.30,ZL201710063036.8
  23. 康晋锋,韩润泽,黄鹏,刘力锋,刘晓彦,基于忆阻器阵列的操作方法,2019.8.9,中国,ZL 201610648336.8
  24. 康晋锋,韩润泽,黄鹏,刘晓彦,刘力锋,一种实现图像卷积的编码型闪存系统和方法,2020.1.3,中国,ZL201710104061.6
  25. 康晋锋,董镇,黄鹏,刘晓彦,刘力锋,基于阻变存储器三维交叉阵列的卷积、池化和激活电路,2019.8.23,中国,ZL201710402866.9
  26. 康晋锋,韩润泽,黄鹏,刘力锋,刘晓彦,基于忆阻器阵列的操作方法,2019.4.16,中国,ZL201610648336.8
  27. 康晋锋,江宇宁,黄鹏,周正,柳晨,韩润泽,刘晓彦,刘力锋,一种基于阻变器件和适应-激发神经元的神经形态系统及实现方法,2019.9.13,中国,ZL201710330263.2
  28. Jinfeng Kang, Peng Huang, Runze Han, Xiaoyanliu, CONVOLUTION OPERATION METHOD BASED ON NOR FLASH ARRAY, US 11,309,026 B2, 2022.4.19
  29. Jinfeng Kang, Peng Huang, Runze Han, Xiaoyanliu, DATA SEARCH SYSTEMS AND METHODS, US 11,145,365 B2, 2021.10.12